0%
Uploading...

2DB1182Q-13

Manufacturer:

Diodes Incorporated

Mfr.Part #:

2DB1182Q-13

Datasheet:
Description:

BJTs TO-252-3 SMD/SMT PNP 10 W Collector Base Voltage (VCBO):40 V Collector Emitter Voltage (VCEO):32 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityPNP
REACH SVHCNo SVHC
Weight3.949996 g
Contact PlatingTin
Frequency110 MHz
Number of Elements1
Max Power Dissipation10 W
Power Dissipation10 W
Max Collector Current2 A
Collector Emitter Breakdown Voltage32 V
Transition Frequency110 MHz
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)32 V
Max Breakdown Voltage32 V
Gain Bandwidth Product110 MHz
Collector Base Voltage (VCBO)40 V
Collector Emitter Saturation Voltage-800 mV
Emitter Base Voltage (VEBO)5 V
Max Cutoff Collector Current1 µA
Transistor TypePNP

Stock: 1258

Distributors
pcbx
Unit Price$0.10752
Ext.Price$0.10752
QtyUnit PriceExt.Price
1$0.10752$0.10752
10$0.10099$1.00990
50$0.09485$4.74250
100$0.08901$8.90100
500$0.08352$41.76000
1000$0.08215$82.15000
3000$0.08080$242.40000
5000$0.07948$397.40000